Semiconductor
High-purity graphite components for crystal growth, ion implantation and wafer processing.
<10 ppm
Ash content (semiconductor grade)
2800°C
Max service temp
IG-110
TOYO TANSO grade
Graphite solutions for Semiconductor
Silicon crystal growing, epitaxial deposition, ion implantation, and thermal oxidation all demand graphite components that combine ultra-low metallic contamination with precise dimensional stability at temperatures above 2000°C. Even sub-ppm levels of iron, nickel, or copper cause deep-level defects that compromise device performance across an entire wafer lot.
Expo Advanced Materials supplies ultra-high-purity graphite components — crucibles, susceptors, puller shafts, heaters, and insulation rings — from TOYO TANSO IG-110 and IG-430U, with full elemental analysis certificates and lot-level traceability from block to finished component.
Why Expo for Semiconductor
TOYO TANSO IG-110 authorised distributor & machining partner
Full elemental analysis MTC with every shipment
Lot traceability from raw block to finished component
Vacuum-sealed PE bag packaging; cleanroom handling on request
Where we supply
Key applications in Semiconductor
CZ Silicon Crystal Growing
Crucibles, susceptors, heaters, and puller shafts for Czochralski single-crystal silicon growth furnaces.
Float Zone (FZ) Silicon
Ultra-high-purity graphite coils and RF heaters for float zone silicon refining processes.
Epitaxial Deposition
Susceptors and tray components for CVD epitaxial silicon and III-V compound deposition reactors.
Diffusion Furnaces
Graphite boats, pushers, and process tubes for thermal diffusion and oxidation in tube furnaces.
MOCVD / MBE
High-purity graphite components for metal-organic chemical vapour deposition and molecular beam epitaxy.
Ion Implantation
Graphite wafer holders and masking components for ion implantation processing.
Technical reference
Typical specifications
| Grade (CZ silicon solar) | TTK-8 / ISO-88 — ash <50 ppm |
| Grade (CZ silicon semiconductor) | IG-110 / IG-430U — ash <10 ppm |
| Grade (Float Zone) | IG-110 HP — ash <5 ppm |
| Critical trace metals | Fe, Ni, Cu < 1 ppm each |
| Density | 1.77–1.85 g/cm³ |
| Max service temperature | 2800°C in inert atmosphere |
| Machining tolerance | ±0.02 mm standard; ±0.01 mm available |
| Packaging | Vacuum-sealed PE; cleanroom-ready on request |
Material grades
Recommended graphite grades
Grades we supply for this application
IG-110
Nuclear/semiconductor grade — ash <5 ppm, exceptional purity
IG-430U
Ultra-fine grain — ideal for susceptors requiring tight surface finish
TTK-8
Premium isostatic grade for solar CZ — ash <50 ppm
Need grade guidance?
Our technical team will recommend the right grade for your operating conditions — at no charge.
Ready to source graphite for Semiconductor?
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